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| Schottky Barrier Diodes (SBD) MA4X714 Silicon epitaxial planar type Unit : mm For switching circuits For wave detection circuit * Two MA3X704As are contained in one package (Two diodes in a different direction) * Optimum for low-voltage rectification because of its low forward rise voltage (VF) * Optimum for high-frequency rectification because of its short reverse recovery time (trr) 2.9 - 0.05 2.8 - 0.3 0.65 0.15 1.5 - 0.05 + 0.25 + 0.2 0.65 0.15 1.9 0.2 0.95 + 0.2 0.95 0.5 I Features 0.5 R 4 1 + 0.1 3 0.4 - 0.05 2 0.2 1.1 - 0.1 + 0.2 I Absolute Maximum Ratings Ta = 25C Parameter Reverse voltage (DC) Peak forward current Forward current (DC) Single Double* Single Double* Tj Tstg IF Symbol VR IFM Rating 30 150 110 30 20 125 -55 to +125 C C mA Unit V mA 0.4 0.2 1 : Cathode 1 2 : Anode 2 3 : Cathode 2 4 : Anode 1 Mini Type Package (4-pin) Marking Symbol: M1P Internal Connection 4 3 1 2 Junction temperature Storage temperature Note) * : Value per chip I Electrical Characteristics Ta = 25C Parameter Reverse current (DC) Forward voltage (DC) Symbol IR VF1 VF2 Terminal capacitance Reverse recovery time* Ct trr VR = 30 V IF = 1 mA IF = 30 mA VR = 1 V, f = 1 MHz IF = IR = 10 mA Irr = 1 mA, RL = 100 Vin = 3 V(peak), f = 30 MHz RL = 3.9 k, CL = 10 pF 1.5 1.0 Conditions Min Typ Max 1 0.4 1.0 Unit A V V pF ns Detection efficiency 65 0 to 0.1 0.1 to 0.3 0.8 0.16 - 0.06 + 0.1 0.6 - 0 + 0.1 0.4 - 0.05 1.45 + 0.1 % Note) 1. Schottky barrier diode is sensitive to electric shock (static electricity, etc.). Due attention must be paid on the charge of a human body and the leakage of current from the operating equipment 2. Rated input/output frequency: 2 000 MHz 3. * : trr measuring instrument Bias Aplication Unit N-50BU Input Pulse tp 10% Output Pulse tr t IF trr t Irr = 1 mA IF = 10 mA IR = 10 mA RL = 100 A VR Pulse Generator (PG-10N) Rs = 50 W.F.Analyzer (SAS-8130) Ri = 50 90% tp = 2 s tr = 0.35 ns = 0.05 1 MA4X714 IF V F 103 1.0 Schottky Barrier Diodes (SBD) VF Ta 103 IR VR 102 75C 25C Ta = 125C - 20C Forward current IF (mA) 0.8 102 IF = 30 mA 10 Forward voltage VF (V) Reverse current IR (A) Ta = 125C 0.6 10 75C 1 0.4 3 mA 0.2 1 mA 1 25C 10-1 10-1 10-2 0 0.2 0.4 0.6 0.8 1.0 1.2 0 -40 10-2 0 40 80 120 160 0 5 10 15 20 25 30 Forward voltage VF (V) Ambient temperature Ta (C) Reverse voltage VR (V) Ct VR 2.4 f = 1 MHz Ta = 25C IR T a 103 Terminal capacitance Ct (pF) 2.0 102 1.6 Reverse current IR (A) VR = 30 V 15 V 10 1.2 1 0.8 0.4 10-1 0 0 5 10 15 20 25 30 10-2 -40 0 40 80 120 160 200 Reverse voltage VR (V) Ambient temperature Ta (C) 2 |
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